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高橋 正光
Journal of Crystal Growth, 401, p.372 - 375, 2013/09
被引用回数：3 パーセンタイル：21.49(Crystallography)The high controllability of molecular-beam epitaxy (MBE) for the growth of nanostructures relies on the use of a monitoring technique, which is reflection-high energy electron diffraction (RHEED) in a typical MBE system. Even sub-monolayer control of the thickness of quantum well structures is achievable using the RHEED oscillation. However, as the semiconductor nanostructures are diversified into lower-dimensional structures including quantum wires and dots, more sophisticated monitoring techniques has become required for full characterization of the nanostructures beyond the thickness of two-dimensional layered structures. In this work, we present in situ X-ray diffraction techniques enabling growth monitoring of a wide variety of low-dimensional structures on the basis of the MBE system combined with an X-ray difftactometer developed at a synchrotron beamline, 11XU, at SPring-8.
齋藤 寛之; 遠藤 成輝; 町田 晃彦; 片山 芳則; 青木 勝敏
no journal, ,
Aluminum-based alloy hydrides have been explored as lightweight hydrogen storage materials. A few aluminum-based alloys have been reported. For example, F. Gingle et al. have reported SrAl
H Zintl phase hydride. Y
AlH
has been synthesized by hydrogenating YAl alloy. These hydrides have been synthesized near ambient pressure. Novel aluminum-alloy hydrides are expected to be synthesized under high pressure and high temperature in which conditions hydrogen becomes extremely reactive and it can reacts with passivated aluminum. In the present study, hydrogenation reactions of aluminum-based alloys were investigated under high pressure and high temperature. The reactions were monitored by in-situ synchrotron radiation X-ray diffraction measurements to clarify its reaction process and to optimize its synthetic conditions.
